Wide angle distributed Bragg reflectors for 590 nm amber AlGaInP light-emitting diodes

Journal of Applied Physics

Volumn 87, Issue 4, 2000, Pages 2052-2054

  Chiou, S W ^a   Lee, C P ^a   Huang, C K ^b   Chen, C W ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0004623209     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.372135     Document Type: Article

References (5)

1. H. Sugawara, K. Itaya, and G. Hatakoshi, J. Appl. Phys. 74, 3189 (1993).
2. H. Sugawara, K. Itaya, and G. Hatakoshi, Jpn. J. Appl. Phys., Part 1 33, 6195 (1994).
3. C. S. Chang, Y. K. Su, P. T. Chang, Y. R. Wu, K. H. Huang, and T. P. Chen, IEEE Photonics Technol. Lett. 9, 182 (1997).
4. K. H. Huang, J. G. Yu, C. P. Kuo, R. M. Fletcher, T. D. Osentowski, L. J. Stinson, M. G. Craford, and A. S. H. Liao, Appl. Phys. Lett. 61, 1045 (1992).
5. F. A. Kish, D. A. Vanderwater, D. C. DeFevere, G. E. Hofler, K. G. Park, and F. M. Steranka, Electron. Lett. 32, 132 (1996).