High-power UV InGaN/AlGaN double-heterostructure LEDs

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 778-781

  Mukai, Takashi ^a   Morita, Daisuke ^a   Nakamura, Shuji ^a  

^a NICHIA CORPORATION   (Japan)

Author keywords

GaN; InGaN; LED; MOCVD; UV

Indexed keywords

ELECTRON ENERGY LEVELS; HETEROJUNCTIONS; LIGHT EMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; ULTRAVIOLET DEVICES;

DOUBLE HETEROSTRUCTURE LIGHT EMITTING DIODES;

LIGHT EMITTING DIODES;

EID: 0032090871     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00292-9     Document Type: Article

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