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Volumn 188, Issue 1, 2001, Pages 363-366
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Low Resistance Non-Alloy Ohmic Contact to p-Type GaN Using Mg-Doped InGaN Contact Layer
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Author keywords
[No Author keywords available]
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Indexed keywords
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EID: 0037815393
PISSN: 00318965
EISSN: None
Source Type: Journal
DOI: 10.1002/1521-396X(200111)188:1<363::AID-PSSA363>3.0.CO;2-L Document Type: Article |
Times cited : (13)
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References (19)
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