High-power truncated-inverted-pyramid (AlxGa1-x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency

Applied Physics Letters

Volumn 75, Issue 16, 1999, Pages 2365-2367

  Krames, M R ^a   Ochiai Holcomb, M ^a   Hofler G E ^a   Carter Coman, C ^a   Chen, E I ^a   Tan, I H ^a   Grillot, P ^a   Gardner, N F ^a   Chui, H C ^a   Huang, J W ^a   Stockman, S A ^a   Kish, F A ^a   Craford, M G ^a   Tan, T S ^b   Kocot, C P ^b   Hueschen, M ^b   Posselt, J ^c   Loh, B ^c   Sasser, G ^c   Collins, D ^c  

^a Materials R and D Department   (United States)

^b HEWLETT PACKARD LABORATORIES   (United States)

^c Product Development Department   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0043080206     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.125016     Document Type: Article

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