Effect of InP passivation on carrier recombination in InxGa1-xAs/GaAs surface quantum wells

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 2 B, 1999, Pages 1133-1134

  Lipsanen, Harri ^a   Sopanen, Markku ^a   Ahopelto, Jouni ^b   Sandmann, Jörg ^c   Feldmann, Jochen ^c  

^a AALTO UNIVERSITY   (Finland)

^b VTT TECHNICAL RESEARCH CENTRE OF FINLAND   (Finland)

^c UNIVERSITY OF MUNICH   (Germany)

Author keywords

InGaAs GaAs; Photoluminescence; Quantum wells; Surface passivation; Time resolved spectroscopy

Indexed keywords

CARRIER CONCENTRATION; MOLECULAR DYNAMICS; OPTICAL VARIABLES MEASUREMENT; PASSIVATION; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SPECTROSCOPY;

CARRIER LIFETIME; CARRIER RECOMBINATION; PHOTOLUMINESCENCE SPECTROSCOPY; TIME RESOLVED SPECTROSCOPY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032628282     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.1133     Document Type: Article

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