White-light emission from InGaN-GaN multiquantum-well light-emitting diodes with Si and Zn codoped active well layer

IEEE Photonics Technology Letters

Volumn 14, Issue 4, 2002, Pages 450-452

  Sheu, J K ^b   Pan, C J ^b   Chi, G C ^b   Kuo, C H ^c,d   Wu, L W ^c,d   Chen, C H ^c,d   Chang, S J ^c   Su, Y K ^a,c  

^a IEEE

^b NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^c NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^d South Epitaxy Corporation   (Taiwan)

Author keywords

Donor acceptor pair transition; InGaN; LED; MQW

Indexed keywords

ELECTROLUMINESCENCE; GALLIUM NITRIDE; LIGHT EMISSION; METALLORGANIC VAPOR PHASE EPITAXY; PHOSPHORS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; ZINC;

MULTIQUANTUM WELLS;

LIGHT EMITTING DIODES;

EID: 0036540216     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.992574     Document Type: Article

References (8)

1. Photon-recycling semiconductor light-emitting diodes
2. White light from InGaN/conjugated polymer hybrid light-emitting diodes
3. 0.85N/GaN superlattice
4. Luminescence of an InGaN/GaN multiple quantum wells light-emitting diode
5. High-brightness InGaN/AlGaN double-heterostructure blue-green-light-emitting diodes