Synthesis and properties of antimonide nanowires

Nanotechnology

Volumn 24, Issue 20, 2013, Pages

  Borg, Mattias B ^a,b   Wernersson, Lars Erik ^a  

^a LUND UNIVERSITY   (Sweden)

^b IBM RESEARCH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONIDES; EMERGING APPLICATIONS; FUNDAMENTAL PHYSICS RESEARCH; LONG WAVELENGTH; NANOWIRE GROWTH; NANOWIRE SYNTHESIS; OPTOELECTRONIC APPLICATIONS; TUNNEL FIELD-EFFECT TRANSISTORS;

FIELD EFFECT TRANSISTORS; POWER ELECTRONICS;

NANOWIRES;

EID: 84876939865     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/24/20/202001     Document Type: Review

References (132)

1. Tomioka K, Yoshimura M and Fukui T 2012 Nature 488 189-92
2. Singh R and Bester G 2009 Phys. Rev. Lett. 103 063601
3. Johansson S, Egard M, Gorji Ghalamestani S, Borg B M, Berg M, Wernersson L-E and Lind E 2011 IEEE Trans. Microw. Theory Tech. 59 2733-8
4. Yeh T-W, Lin Y-T, Stewart L S, Dapkus P D, Sarkissian R, O'Brien J D, Ahn B and Nutt S R 2012 Nano Lett. 12 3257-62
5. Borgström M T, Wallentin J, Heurlin M, Fält S, Wickert P, Leene J, Magnusson M H, Deppert K and Samuelson L 2011 IEEE J. Sel. Top. Quantum Electron. 17 1050-61
6. Weman H and Dasa D L 2011 III-antimonide nanowires Advances in III-V Semiconductor Nanowires and Nanodevices ed J Li, D Wang and R R LaPierre (Oak Park, IL: Bentham Science Publishers) pp 89-104
7. Vurgaftman I and Meyer J R 2001 J. Appl. Phys. 89 5815
8. Snodgrass W, Wu B-R, Cheng K Y and Feng M 2007 IEEE Int. Electron Devices Meeting, 2007 (IEDM Technical Digest) (Washington DC, Dec. 2007) pp 663-6
9. Chow D H, Dunlap H L, Williamson W III, Enquist S, Gilbert B K, Subramaniam S, Lei P-M and Bernstein G H 1996 IEEE Electron Device Lett. 17 69
10. Vizbaras K, Törpe M, Arafin S and Amann M-C 2011 Semicond. Sci. Technol. 26 075021
11. Knoch J 2009 Proc. Int. Symp. VLSI-TSA p 45
12. Koswatta S O, Koester S J and Haensch W 2010 IEEE Trans. Electron Devices 57 3222
13. Datta S et al 2005 IEEE Int. Electron Devices Meeting, 2005 (IEDM Technical Digest) (Washington DC, Dec) pp 763-6
14. Pooley O J, Gilbertson A M, Buckle P D, Hall R S, Buckle L, Emeny M T, Fearn M, Cohen L F and Ashley T 2010 New J. Phys. 12 053022
15. Sandhu A, Sandbonsugi H, Shibasaki I, Abe M and Handa H 2004 Japan. J. Appl. Phys. 43 L868-70
16. Spicer W E, Chye P W, Garner C M, Lindau I and Pianetta P 1979 Surf. Sci. 86 763-88
17. Jou M J, Cherng Y T, Jen H R and Stringfellow G B 1988 J. Cryst. Growth 93 62
18. Jun S, Fetzer C, Lee R T, Shurtleff J K and Stringfellow G B 2000 Appl. Phys. Lett. 76 2716-8
19. Fetzer C M, Lee R T, Shurtleff J K, Stringfellow G B, Lee S K and Seong T Y 2000 Appl. Phys. Lett. 76 1440-2
20. Mingo N 2004 Appl. Phys. Lett. 84 2652
21. Nilsson H A, Caroff P, Thelander C, Larsson M, Wagner J B, Wernersson L-E, Samuelson L and Xu H Q 2009 Nano Lett. 9 3151
22. Mourik V, Zou K, Frolov S M, Plissard S R, Bakkers E P A M and Kouwenhoven L P 2012 Science 336 1003
23. Deng M T, Yu C L, Huang G Y, Larsson M, Caroff P and Xu H Q 2013 Nano Lett. 12 6414-9
24. Aardvark A, Mason N J and Walker P J 1997 Prog. Cryst. Growth Charact. 35 207
25. Dimroth F, Agert C and Bett A W 2003 J. Cryst. Growth 248 265
26. Biefeld R M 2002 Mater. Sci. Eng. R 36 105
27. Wang C A 1997 J. Cryst. Growth 170 725-31
28. Lizak A and Fitzner K 1994 J. Phase Equilib. 15 151
29. Melville H W and Gray S C 1936 Trans. Faraday Soc. 32 1026
30. Rosenblatt G and Birchenall C 1961 J. Chem. Phys. 35 788
31. Speiser R and Johnston H L 1953 J. Am. Chem. Soc. 75 1469
32. Geiger F, Busse C A and Loehrke R I 1987 Int. J. Thermophys. 8 425
33. Nakamura S, Mukai T and Senoh M 1994 Appl. Phys. Lett. 64 1687
34. Hofstetter D, Beck M, Aellen T, Faist J, Oesterle U, Ilegems M, Gini E and Melchior H 2001 Appl. Phys. Lett. 78 1964
35. King R R, Law D C, Edmondson K M, Fetzer C M, Kinsey G S, Yoon H, Sherif R A and Karam N H 2007 Appl. Phys. Lett. 90 183516
36. Copel M, Reuter M C, Horn von Hoegen M and Tromp R M 1990 Phys. Rev. B 42 11682
37. Portavoce A, Berbezier I and Ronda A 2003 Mater. Eng. B 101 181
38. Vrijmoeth J, van der Vegt H A, Meyer J A, Vlieg E and Behm R G 1994 Phys. Rev. Lett. 72 3843
39. Stringfellow G B and Chen G S 1991 J. Vac. Sci. Technol. B 9 2182
40. Shurtleff J K, Lee R T, Fetzer C M and Stringfellow G B 1999 Appl. Phys. Lett. 75 1914
41. Stringfellow G B, Lee R T, Fetzer C M, Shurtleff J K, Hsy Y, Jun S W, Lee S and Seong T Y 2000 J. Electron. Mater. 29 134
42. Lackner D et al 2009 J. Cryst. Growth 311 3563
43. Tummler J, Woitok J, Hermans J, Geurts J, Schneider P, Moulin D, Behet M and Heime K 1997 J. Cryst. Growth 170 772
44. Shurtleff J K, Lee R T and Stringfellow G B 2000 Proc. IEEE Int. Conf. Compound Semicond. 2000 (Monterey CA, Oct. 2000) pp 197-203
45. Pitts O J, Watkins S P, Wang C X, Fink V and Kavanagh K L 2003 J. Cryst. Growth 254 28
46. Lugani L, Ercolani E, Beltram F and Sorba L 2011 J. Cryst. Growth 323 304-6
47. Jeppsson M, Dick K A, Wagner J B, Caroff P, Deppert K, Samuelson L and Wernersson L-E 2008 J. Cryst. Growth 310 4115-21
48. Plissard S, Dick K A, Wallart X and Caroff P 2010 Appl. Phys. Lett. 96 129101
49. Pascal F, Delannoy F, Bougnot J, Gouskov L, Bougnot G, Grosse P and Kaoukab J 1990 J. Electron. Mater. 19 187
50. Chen C H, Huang K T, Drobeck D L and Stringfellow G B 1992 J. Cryst. Growth 124 142
51. Zaitsev-Zotov S V, Kumzerov Y A, Firsov Y A and Monceau P 2000 J. Phys.: Condens. Matter 12 L303
52. Kuczkowski A, Schulz S and Assenmacher W 2001 J. Mater. Chem. 11 3241
53. Vogel A T, de Boor J, Becker M, Wittemann J V, Mensah S L, Werner P and Schmidt V 2011 Nanotechnology 22 015605
54. Vogel A T, de Boor J, Wittemann J V, Mensah S L, Werner P and Schmidt V 2011 Cryst. Growth Des. 11 1896-900
55. Park H D, Prokes S M, Twigg M E, Ding Y and Wang Z L 2007 J. Cryst. Growth 304 399-401
56. Mandl B, Dick K A, Kriegner D, Keplinger M, Bauer G, Stangl J and Deppert K 2011 Nanotechnology 22 145603
57. Caroff P, Wagner J B, Dick K A, Nilsson H A, Jeppsson M, Deppert K, Samuelson L, Wallenberg L R and Wernersson L-E 2008 Small 4 878-82
58. Pozuelo M, Zhou H, Lin S, Lipman S A, Goorsky M S, Hicks R F and Kodambaka S 2011 J. Cryst. Growth 329 6-11
59. Ercolani D, Rossi F, Li A, Roddaro S, Grillo V, Salviati G, Beltram F and Sorba L 2009 Nanotechnology 20 505605
60. Caroff P, Messing M E, Borg B M, Dick K A, Deppert K and Wernersson L-E 2009 Nanotechnology 20 495606
61. Vaddiraju S, Sunkara M K, Chin A H, Ning C Z, Dholakia G R and Meyyappan M 2007 J. Phys. Chem. C 111 7339-47
62. Guo Y N, Zou J, Paladugu M, Wang H, Gao Q, Tan H H and Jagadish C 2006 Appl. Phys. Lett. 89 231917
63. Dheeraj D L, Patriarche G, Zhou H, Hoang T B, Moses A F, Grønsberg S, van Helvoort A T J, Fimland B-O and Weman H 2008 Nano Lett. 8 4459-63
64. Borg B M, Dick K A, Ganjipour B, Pistol M-E, Wernersson L-E and Thelander C 2010 Nano Lett. 10 4080-5
65. Ghalamestani S G, Berg M, Dick K A and Wernersson L-E 2011 J. Cryst. Growth 332 12-6
66. Wang Y, Schmidt V, Senz S and Gösele U 2006 Nature Nanotechnol. 1 186
67. Wittemann J V, Münchgesang W, Senz S and Schmidt V 2010 J. Appl. Phys. 107 096105
68. Hillerich K, Dick K A, Messing M E, Deppert K and Johansson J 2012 Nano Res. 5 297
69. Schulz S, Schwartz M, Kuczkowski A and Assenmacher W 2010 J. Cryst. Growth 312 1475
70. Pendyala C, Vaddiraju S, Kim J H, Jacinski J, Chen Z and Sunkara M K 2010 Semicond. Sci. Technol. 25 024014
71. Allen J E et al 2008 Nature Nanotechnol. 3 168
72. Bar-Sadan M, Barthel J, Shtrikman H and Houben L 2012 Nano Lett. 12 2352
73. Seifert W et al 2004 J. Cryst. Growth 272 211
74. Burke R A, Weng Z, Kuo M-W, Song Y-W, Itsuno A M, Mayer T S, Durbin S M, Reeves R J and Redwing J M 2010 J. Electron. Mater. 39 355-64
75. Paul R K, Penchev M, Zhong J, Ozkan M, Ghazinejad M, Jing X, Yengel E and Ozkan C S 2010 Mater. Chem. Phys. 121 397-401
76. Borg B M 2012 Antimonide heterostructure nanowires - growth, physics and devices PhD Dissertation Lund University
77. Nebolsin V A and Shchetinin A A 2003 Inorg. Mater. 39 899
78. Weng X, Burke R A, Dickey E C and Redwing J M 2010 J. Cryst. Growth 312 514
79. Lugani L, Ercolani D, Rossi F, Salviati G, Beltram F and Sorba L 2010 Cryst. Growth Des. 10 4038
80. Ercolani D, Gemmi M, Nasi L, Rossi F, Pea M, Li A, Salviati G, Beltram F and Sorba L 2012 Nanotechnology 23 115606
81. Plissard S R, Slapak D R, Verheijen M A, Hocevar M, Immink G W G, Van Weperen I, Nadj-Perge S, Frolov S M, Kouwenhoven L P and Bakkers E P A M 2012 Nano Lett. 12 1794
82. Dick K A, Bolinsson J, Borg B M and Johansson J 2012 Nano Lett. 12 3200
83. Tsai C T and Williams R S 1986 J. Mater. Res. 1 352-60
84. Dick K A 2008 Prog. Cryst. Growth Charact. Mater. 54 138-73
85. Borg B M, Dick K A, Eymery J and Wernersson L-E 2011 Appl. Phys. Lett. 98 113104
86. Lugani L, Ercolani D, Rossi F, Salviati G, Beltram F and Sorba L 2010 Cryst. Growth Des. 10 4038-42
87. Glas F 2006 Phys. Rev. B 74 121302
88. Ertekin E, Greaney P A, Chrzan D C and Sands T D 2005 J. Appl. Phys. 97 114325
89. Ek M, Borg B M, Dey A W, Ganjipour B, Thelander C, Wernersson L-E and Dick K A 2012 Cryst. Growth Des. 11 4588
90. Krogstrup P, Yamasaki J, Sorensen C B, Johnson E, Wagner J B, Pennington R, Aagesen M, Tanaka N and Nygård J 2009 Nano Lett. 9 3689
91. Borg B M, Ek M, Dick K A, Ganjipour B, Dey A W, Thelander C and Wernersson L-E 2011 Appl. Phys. Lett. 99 203101
92. Xu T, Dick K A, Plissard S, Nguyen T H, Makoudi Y, Berthe M, Nys J-P, Wallart X, Grandidier B and Caroff P 2012 Nanotechnology 23 095702
93. Ghalamestani S G, Ek M, Ganjipour B, Thelander C, Johansson J, Caroff P and Dick K A 2012 Nano Lett. 12 4914-9
94. Zhou H, Pozuelo M, Hicks R F and Kodambaka S 2011 J. Cryst. Growth 319 25
95. Johansson J, Karlsson L, Dick K A, Bolinsson J, Wacaser B A, Deppert K and Samuelson L 2008 J. Cryst. Growth 310 5102-5
96. Dick K A, Bolinsson J, Messing M E, Lehmann S, Johansson J and Caroff P 2011 J. Vac. Sci. Technol. B 29 04D103
97. Algra R E, Marcel A V, Borgström M T, Feiner L-F, Immink G, van Enckewort W J P, Vlieg E and Bakkers E P A M 2008 Nature 456 369-72
98. Wallentin J and Borgström M T 2011 J. Mater. Res. 26 2142-56
99. Phillips J C 1970 Rev. Mod. Phys. 42 317
100. Ngo C, Zhou H, Mecklenburg M, Pozuelo M, Regan B C, Xiao Q F, Shenoy V B, Hicks R F and Kodambaka S 2011 J. Cryst. Growth 336 14
101. Lehmann S, Jacobsson D, Deppert K and Dick K A 2012 Nano Res. 5 470-6
102. Yang Y W, Li L, Huang X H, Ye M, Wu Y C and Li G H 2006 Appl. Phys. A 84 7
103. Das S R, Delker C J, Zakharov D, Chen Y P, Sands T D and Janes D B 2011 Appl. Phys. Lett. 98 243504
104. Nilsson H A, Caroff P, Thelander C, Lind E, Karlström O and Wernersson L-E 2010 Appl. Phys. Lett. 96 153505
105. Piper L F J, Veal T D, Lowe M J and McConville C F 2005 Phys. Rev. B 73 195321
106. Wagner J, Alvarez A-L, Schmitz J, Ralston J D and Koidi P 1993 Appl. Phys. Lett. 63 349
107. Thelander C, Caroff P, Plissard S and Dick K A 2012 Appl. Phys. Lett. 100 232105
108. Khan M B, Penchev M, Jing X, Wang X, Bozhilov K N, Ozkan M and Ozkan C S 2008 J. Nanoelectron. Optoelectron. 3 199
109. Wang Y, Chi J, Banerjee K, Grützmacher D, Schäpers T and Lu J G 2011 J. Mater. Chem. 21 2459
110. Jeppsson M, Dick K A, Nilsson H A, Sköld N, Wagner J B, Caroff P and Wernersson L-E 2008 J. Cryst. Growth 310 5119-22
111. Borg B M, Ek M, Ganjipour B, Dey A W, Dick K A, Wernersson L-E and Thelander C 2012 Appl. Phys. Lett. 101 043508
112. Ganjipour B, Ek M, Borg B M, Dick K A, Pistol M-E, Wernersson L-E and Thelander C 2012 Appl. Phys. Lett. 101 103501
113. Yang Y, Li L, Huang X, Li G and Zhang L 2007 J. Mater. Sci. 42 2753-7
114. Nilsson H A, Caroff P, Lind E, Pistol M-E, Thelander C and Wernersson L-E 2011 J. Appl. Phys. 110 064510
115. Tiwari S and Frank D J 1992 Appl. Phys. Lett. 60 630
116. Ashley T, Emeny M T, Hayes D G, Hilton K P, Jefferies R, Maclean J O, Smith S J, Tang A W-H, Wallis D J and Webber P J 2009 IEEE Int. Electron Dev. Meeting 2009 pp 1-4
117. Paul R K, Badhulika S and Mulchandani A 2011 Appl. Phys. Lett. 99 033103
118. Dey A W, Svensson J, Borg B M, Ek M and Wernersson L-E 2012 Nano Lett. 12 5593-7
119. Xu M, Wang R and Ye P D 2011 IEEE Electron Device Lett. 32 883
120. Mizokawa Y, Komoda O and Miyase S 1988 Thin Solid Films 156 127-43
121. Tomioka K, Yoshimura M and Fukui T 2012 Symp. VLSI Techn. 2012 p 47
122. Seabaugh A 2011 Proc. European Solid-State Dev. Res. Conf. 2011 p 34
123. Ganjipour B, Dey A W, Borg B M, Ek M, Pistol M-E, Dick K A, Wernersson L-E and Thelander C 2011 Nano Lett. 11 4222
124. Dey A W, Borg B M, Ganjipour B, Ek M, Dick K A, Lind E, Nilsson P, Thelander C and Wernersson L-E 2012 70th Annual Device Research Conf. Santa Barbara 2012 pp 205-6
125. Dey A W, Borg B M, Ganjipour B, Ek M, Dick K A, Lind E, Thelander C and Wernersson L-E 2013 IEEE Electron. Device Lett. 34 211-3
126. Ganjipour B, Nilsson H A, Borg B M, Wernersson L-E, Samuelson L, Xu H Q and Thelander C 2011 Appl. Phys. Lett. 99 262104
127. Zhang W, Dobrovitski V V, Al-Hassanieh K A, Daggoto E and Harmon B N 2006 Phys. Rev. B 74 205313
128. Zhou F, Seol J H, Moore A L, Shi L, Ye Q L and Scheffler R 2006 J. Phys.: Condens. Matter. 18 9651
129. Uruypin O N, Vedernikov M V, Shabaldin A A, Ivanov Y V, Kumzerov Y A and Fonkin A V 2009 J. Electron. Mater. 38 990
130. Svensson J, Anntu N, Vainorius N, Borg B M and Wernersson L-E 2013 Nano Lett. 13 1380-5
131. Pitanti A, Ercolani D, Sorba L, Roddaro S, Beltram F, Nasi L, Salviati G and Tredicucci A 2011 Phys. Rev. X 1 011006
132. Xu W, Chin A, Ye L, Ning C Z and Yu H 2012 J. Appl. Phys. 111 104515