On the possibility of obtaining MOSFET-like performance and Sub-60-mV/dec swing in 1-D broken-gap tunnel transistors

IEEE Transactions on Electron Devices

Volumn 57, Issue 12, 2010, Pages 3222-3230

  Koswatta, Siyuranga O ^a   Koester, Steven J ^b   Haensch, Wilfried ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b University of Minnesota   (United States)

Author keywords

Band to band tunneling; broken gap; heterojunction; phonon scattering; subthreshold swing; tunneling field effect transistor (TFET)

Indexed keywords

BAND TO BAND TUNNELING; BROKEN GAP; ELECTRON PHONON SCATTERING; ELECTROSTATIC CONTROL; HIGH DRIVE CURRENT; HIGH-PERFORMANCE OPERATION; HOMOJUNCTION; MATERIAL SYSTEMS; MOS-FET; MOSFET PERFORMANCE; NON-EQUILIBRIUM GREEN'S FUNCTION FORMALISM; OFF-STATE LEAKAGE; PERFORMANCE POTENTIALS; POWER DISSIPATION; QUANTUM CONFINEMENT EFFECTS; QUANTUM TRANSPORT SIMULATIONS; ROOM TEMPERATURE; SUBTHRESHOLD SWING; SUPPLY VOLTAGES; THERMALIZATION; TUNNEL TRANSISTORS; TUNNELING FIELD-EFFECT TRANSISTORS;

CARBON NANOTUBES; COMPUTER SIMULATION; GREEN'S FUNCTION; HETEROJUNCTIONS; MOSFET DEVICES; PHONON SCATTERING; PHONONS; QUANTUM CHEMISTRY; QUANTUM ELECTRONICS;

FIELD EFFECT TRANSISTORS;

EID: 78649988576     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2079250     Document Type: Article

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