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Volumn 248, Issue SUPPL., 2003, Pages 265-273

Growth of Sb-based materials by MOVPE

Author keywords

A1. Doping; A1. Impurities; A3. Metalorganic vapor phase epitaxy; A3. Organometallic vapor phase epitaxy; B1. Antimonides; B2. Semiconducting III V materials

Indexed keywords

CARRIER CONCENTRATION; METALLORGANIC VAPOR PHASE EPITAXY; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE;

EID: 0037291933     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01818-3     Document Type: Conference Paper
Times cited : (37)

References (35)
  • 27
    • 0012212850 scopus 로고    scopus 로고
    • Epichem, http://www.epichem.com, 2002.
    • (2002)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.