High current density esaki tunnel diodes based on GaSb-InAsSb heterostructure nanowires

Nano Letters

Volumn 11, Issue 10, 2011, Pages 4222-4226

  Ganjipour, Bahram ^a   Dey, Anil W ^a   Borg, B Mattias ^a   Ek, Martin ^a   Pistol, Mats Erik ^a   Dick, Kimberly A ^a   Wernersson, Lars Erik ^a   Thelander, Claes ^a  

^a LUND UNIVERSITY   (Sweden)

Author keywords

broken band; Esaki tunnel diode; GaSb; heterostructure; InAs; Nanowire; tunnel FET

Indexed keywords

BROKEN BAND; ESAKI TUNNEL DIODE; GASB; INAS; TUNNEL FET;

DIODES; ELECTRIC PROPERTIES; ELECTRIC WIRE; GALLIUM ALLOYS; GATE DIELECTRICS; GATES (TRANSISTOR); HETEROJUNCTIONS; INDIUM ANTIMONIDES; INDIUM ARSENIDE; NANOWIRES; TUNNEL DIODES;

TUNNEL JUNCTIONS;

EID: 80054012791     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl202180b     Document Type: Article

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