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Volumn 310, Issue 23, 2008, Pages 5102-5105
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Effects of growth conditions on the crystal structure of gold-seeded GaP nanowires
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Author keywords
A1. Crystal morphology; A1. Planar defects; A3. Metal organic vapor phase epitaxy; B1. Nanomaterials; B2. Semiconducting III V materials
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Indexed keywords
CRYSTAL GROWTH;
DEFECT DENSITY;
ELECTRIC WIRE;
GALLIUM ALLOYS;
METALLORGANIC VAPOR PHASE EPITAXY;
NANOSTRUCTURED MATERIALS;
NANOSTRUCTURES;
NANOWIRES;
POWDERS;
SEMICONDUCTOR GROWTH;
VAPORS;
ZINC;
ZINC SULFIDE;
A1. CRYSTAL MORPHOLOGY;
A1. PLANAR DEFECTS;
A3. METAL-ORGANIC VAPOR-PHASE EPITAXY;
B1. NANOMATERIALS;
B2. SEMICONDUCTING III-V MATERIALS;
CRYSTAL STRUCTURE;
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EID: 56249093776
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2008.08.003 Document Type: Article |
Times cited : (15)
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References (11)
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