A III-V nanowire channel on silicon for high-performance vertical transistors

Nature

Volumn 488, Issue 7410, 2012, Pages 189-192

  Tomioka, Katsuhiro ^a,b   Yoshimura, Masatoshi ^a   Fukui, Takashi ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER; NANOMATERIAL; NANOWIRE; SILICON;

ELECTRICAL CONDUCTIVITY; ELECTRON; MOBILITY; PERFORMANCE ASSESSMENT; SILICON;

ARTICLE; DIELECTRIC CONSTANT; ELECTRON; FIELD EFFECT TRANSISTOR; GATE CONTROL THEORY; PRIORITY JOURNAL; SEMICONDUCTOR;

EID: 84864697454     PISSN: 00280836     EISSN: 14764687     Source Type: Journal    
DOI: 10.1038/nature11293     Document Type: Article

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