Room temperature device performance of electrodeposited InSb nanowire field effect transistors

Applied Physics Letters

Volumn 98, Issue 24, 2011, Pages

  Das, Suprem R ^a   Delker, Collin J ^a   Zakharov, Dmitri ^a   Chen, Yong P ^a   Sands, Timothy D ^a   Janes, David B ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL LENGTH; CURRENT SATURATION; DEVICE PERFORMANCE; DRAIN CONDUCTANCE; ENHANCED SCATTERING; FIELD-EFFECT; INSB NANOWIRE; ON-CURRENTS; ON/OFF RATIO; POROUS ANODIC ALUMINA TEMPLATE; ROOM TEMPERATURE; SOURCE-DRAIN VOLTAGE; TRANSISTOR CHANNELS; VELOCITY SATURATION EFFECT; ZINC BLENDE CRYSTAL STRUCTURE;

CRYSTAL STRUCTURE; DRAIN CURRENT; ELECTRODEPOSITION; ELECTRON MOBILITY; GATES (TRANSISTOR); INDIUM ANTIMONIDES; MESFET DEVICES;

NANOWIRES;

EID: 79960596428     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3587638     Document Type: Article

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