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Volumn 99, Issue 26, 2011, Pages

GaSb nanowire single-hole transistor

(7) Ganjipour, Bahram a Nilsson, Henrik A a Mattias Borg, B a Wernersson, Lars Erik a Samuelson, Lars a Xu, H Q a Thelander, Claes a

a LUND UNIVERSITY (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

BACK-GATE; CHARGING ENERGIES; CONDUCTANCE OSCILLATIONS; EXPERIMENTAL STUDIES; FABRICATED DEVICE; HOLE TRANSPORTS; P-TYPE; ROOM TEMPERATURE; SINGLE HOLE TRANSISTORS; SOURCE-DRAIN ELECTRODES; TRANSFER CHARACTERISTICS; TRANSPORT MEASUREMENTS;

NANOWIRES;

GALLIUM ALLOYS;

EID: 84862937192 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3673328 Document Type: Article

Times cited : (35)

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