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Volumn 12, Issue 9, 2012, Pages 4914-4919

Demonstration of defect-free and composition tunable Ga xIn 1-xSb nanowires

Author keywords

antimonide; GaInSb; III V semiconductor; MOSFET; nanowire; zinc blende structure

Indexed keywords

ANTIMONIDES; GAINSB; II-IV SEMICONDUCTORS; MOS-FET; ZINCBLENDE STRUCTURES;

EID: 84866309982     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl302497r     Document Type: Article
Times cited : (42)

References (39)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.