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Volumn 10, Issue 10, 2010, Pages 4080-4085

InAs/GaSb heterostructure nanowires for tunnel field-effect transistors

(6) Borg, B Mattias a Dick, Kimberly A a Ganjipour, Bahram a Pistol, Mats Erik a Wernersson, Lars Erik a Thelander, Claes a

a LUND UNIVERSITY (Sweden)

Author keywords

GaSb; heterostructure; InAs; Nanowire; TFET; tunneling

Indexed keywords

GASB; HETEROSTRUCTURES; INAS; TFET; TUNNELING;

ELECTRIC WIRE; FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; INDIUM ARSENIDE; NANOWIRES; SEMICONDUCTING INDIUM; TRANSMISSION ELECTRON MICROSCOPY;

HETEROJUNCTIONS;

EID: 77958055794 PISSN: 15306984 EISSN: 15306992 Source Type: Journal
DOI: 10.1021/nl102145h Document Type: Article

Times cited : (163)

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