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Volumn 312, Issue 9, 2010, Pages 1475-1480

Self-catalyzed growth of GaSb nanowires at low reaction temperatures

Author keywords

A1. Nanostructures; A3. Metalorganic chemical vapor deposition; B1. Antimonides; B2. Semiconducting gallium compounds

Indexed keywords

A3.METALORGANIC CHEMICAL VAPOR DEPOSITION; ANTIMONIDES; B1. ANTIMONIDES; B2. SEMICONDUCTING GALLIUM COMPOUNDS; DECOMPOSITION TEMPERATURE; GLASS AMPOULES; LEWIS ACID-BASE ADDUCTS; REACTION TEMPERATURE; SELF-CATALYZED GROWTH; SI(1 0 0); THERMAL DECOMPOSITIONS;

EID: 77949916382     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.01.026     Document Type: Article
Times cited : (20)

References (51)
  • 39
    • 0034829607 scopus 로고    scopus 로고
    • The VLS mechanism was confirmed at the nanometer scale by direct, in-situ observation of nanowire growth in a transmission electron microscope at high temperatures
    • Wu Y., and Yang P. J. Am. Chem. Soc. 123 (2001) 3165 The VLS mechanism was confirmed at the nanometer scale by direct, in-situ observation of nanowire growth in a transmission electron microscope at high temperatures
    • (2001) J. Am. Chem. Soc. , vol.123 , pp. 3165
    • Wu, Y.1    Yang, P.2
  • 46
    • 0023162961 scopus 로고    scopus 로고
    • Program used for simulation was published in: P.A. Stadelmann, Ultramicroscopy 21 (1987) 131; JEMS-ENS CIME EPFL, Lausanne, 2005.
    • Program used for simulation was published in: P.A. Stadelmann, Ultramicroscopy 21 (1987) 131; JEMS-ENS CIME EPFL, Lausanne, 2005.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.