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Volumn 110, Issue 6, 2011, Pages

Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors

Author keywords

[No Author keywords available]

Indexed keywords

BAND TO BAND TUNNELING; BARRIER HEIGHTS; ELECTRICAL MEASUREMENT; HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS; HETEROSTRUCTURE JUNCTIONS; INAS; NARROW BAND GAP; P-TYPE CONDUCTION; TEMPERATURE DEPENDENT; VOLTAGE DROP;

EID: 80053550455     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3633742     Document Type: Article
Times cited : (10)

References (12)
  • 4
    • 78049446473 scopus 로고    scopus 로고
    • 10.1016/j.vacuum.2010.02.012
    • S Yamaguchi and M. Matsumoto, Vacuum 84, 1323 (2010). 10.1016/j.vacuum.2010.02.012
    • (2010) Vacuum , vol.84 , pp. 1323
    • Yamaguchi, S.1    Matsumoto, M.2
  • 11
    • 69549103282 scopus 로고    scopus 로고
    • 10.1103/PhysRevB.80.035316
    • M.-E. Pistol and C. E. Pryor, Phys. Rev. B 80, 035316 (2009). 10.1103/PhysRevB.80.035316
    • (2009) Phys. Rev. B , vol.80 , pp. 035316
    • Pistol, M.-E.1    Pryor, C.E.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.