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Volumn 110, Issue 6, 2011, Pages
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Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors
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Author keywords
[No Author keywords available]
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Indexed keywords
BAND TO BAND TUNNELING;
BARRIER HEIGHTS;
ELECTRICAL MEASUREMENT;
HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS;
HETEROSTRUCTURE JUNCTIONS;
INAS;
NARROW BAND GAP;
P-TYPE CONDUCTION;
TEMPERATURE DEPENDENT;
VOLTAGE DROP;
ENERGY GAP;
IMPACT IONIZATION;
INDIUM ANTIMONIDES;
INDIUM ARSENIDE;
NANOWIRES;
TRANSISTORS;
FIELD EFFECT TRANSISTORS;
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EID: 80053550455
PISSN: 00218979
EISSN: None
Source Type: Journal
DOI: 10.1063/1.3633742 Document Type: Article |
Times cited : (10)
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References (12)
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