High current density InAsSb/GaSb tunnel field effect transistors

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2012, Pages 205-206

  Dey, Anil W ^a   Borg, B Mattias ^a   Ganjipour, Bahram ^a   Ek, Martin ^a   Dick, Kimberly A ^a   Lind, Erik ^a   Nilsson, Peter ^a   Thelander, Claes ^a   Wernersson, Lars Erik ^a  

^a LUND UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

BAND ALIGNMENTS; DEVICE CHARACTERIZATION; ESAKI DIODE; HIGH CURRENT DENSITIES; INAS; INAS/GASB; LOW-POWER OPERATION; ON-CURRENTS; ROOM TEMPERATURE; TUNNEL FIELD EFFECT TRANSISTOR; TYPE II;

FIELD EFFECT TRANSISTORS; INDIUM ANTIMONIDES; INDIUM ARSENIDE; TUNNEL DIODES;

NANOWIRES;

EID: 84866914447     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2012.6257038     Document Type: Conference Paper

References (3)

1. High Current Density Esaki Tunnel Diodes Based on GaSb-lnAsSb Heterostructure Nanowires. B. Ganjipour, A.W. Dey, B. M. Borg, M. Ek, M.-E. Pistol, K. A. Dick, L.-E. Wernersson, and C. Thelander. Nano Letters 2011 11 (10),4222-4226
2. Formation of the Axial Heterojunction in GaSb/lnAs(Sb) Nanowires with High Crystal Quality. M. Ek, B. M. Borg, A. W. Dey, B.Ganjipour, C.Thelander, L.-EWernersson, and K. A. Dick. Crystal Growth & Design 2011 11 (10),4588-4593
3. Diameter reduction of nanowire tunnel heterojunctions using in situ annealing. B. M. Borg, M. Ek, K. A. Dick, B. Ganjipour, A. W. Dey, C. Thelander, and L.-E. Wernersson, Appl. Phys. Lett. 99, 203101,2011