Parameter space mapping of InAs nanowire crystal structure

Journal of Vacuum Science and Technology B

Volumn 29, Issue 4, 2011, Pages

  Dick, Kimberly A ^a   Bolinsson, Jessica ^a   Messing, Maria E ^a   Lehmann, Sebastian ^a   Johansson, Jonas ^a   Caroff, Philippe ^b  

^a LUND UNIVERSITY   (Sweden)

^b INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

GROWTH KINETICS; III-V SEMICONDUCTORS; INDIUM ARSENIDE; KNOWLEDGE MANAGEMENT; METALLORGANIC VAPOR PHASE EPITAXY; NANOWIRES; NARROW BAND GAP SEMICONDUCTORS; ORGANOMETALLICS; THERMODYNAMICS; ZINC SULFIDE;

GROWTH CONDITIONS; HEXAGONAL WURTZITE; METAL-ORGANIC VAPOR PHASE EPITAXY; NUCLEATION KINETICS; PARAMETER DEPENDENCY; PRECURSOR CHEMISTRY; SEMICONDUCTOR NANOWIRE; TRANSFER OF KNOWLEDGE;

CRYSTAL STRUCTURE;

EID: 80051901082     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.3593457     Document Type: Article

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