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Applied Physics Letters

Volumn 98, Issue 11, 2011, Pages

Enhanced Sb incorporation in InAsSb nanowires grown by metalorganic vapor phase epitaxy

(4) Borg, B Mattias a Dick, Kimberly A a Eymery, Jol b Wernersson, Lars Erik a

a LUND UNIVERSITY (Sweden)

b CEA GRENOBLE (France)

Author keywords

[No Author keywords available]

Indexed keywords

BRAGG PEAKS; GROWTH CONDITIONS; HIGH RESOLUTION X RAY DIFFRACTION; HIGH-SPEED ELECTRONICS; IN-PLANE; INAS; LONG WAVELENGTH; METAL-ORGANIC VAPOR PHASE EPITAXY; THERMODYNAMIC CALCULATIONS; V/III RATIO;

EPITAXIAL GROWTH; INDIUM ANTIMONIDES; INDIUM ARSENIDE; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL INSTRUMENTS; VAPORS; X RAY DIFFRACTION;

NANOWIRES;

EID: 79952918478 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3566980 Document Type: Article

Times cited : (58)

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