High-current GaSb/InAs(Sb) nanowire tunnel field-effect transistors

IEEE Electron Device Letters

Volumn 34, Issue 2, 2013, Pages 211-213

  Dey, Anil W ^a   Borg, B Mattias ^a   Ganjipour, Bahram ^a   Ek, Martin ^b   Dick, Kimberly A ^b,c   Lind, Erik ^a   Thelander, Claes ^a   Wernersson, Lars Erik ^a  

^a LUND UNIVERSITY   (Sweden)

^b Division of Polymer and Materials Chemistry   (Sweden)

^c Solid State Physics   (Sweden)

Author keywords

Broken gap; GaSb; III V; InAs; tunnel field effect transistors (TFETs)

Indexed keywords

BAND ALIGNMENTS; BROKEN GAPS; DRIVE CURRENTS; ELECTRICAL CHARACTERIZATION; GASB; GATE OXIDE; HIGH-CURRENT; III-V; INAS; INTERBAND TUNNELING; ON-CURRENTS;

DISPLAY DEVICES; HETEROJUNCTIONS; INDIUM ARSENIDE; NANOWIRES;

FIELD EFFECT TRANSISTORS;

EID: 84873058119     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2234078     Document Type: Article

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