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Volumn 323, Issue 1, 2011, Pages 304-306

Growth mechanism of InAsInSb heterostructured nanowires grown by chemical beam epitaxy

(4) Lugani, Lorenzo a Ercolani, Daniele a,b Beltram, Fabio a,b Sorba, Lucia a,b

Author keywords

Chemical beam epitaxy; Crystal morphology; Growth models; Low dimensional structures; Nanostructures; Semiconducting IIIV materials

Indexed keywords

CRYSTAL MORPHOLOGY; GIBBS-THOMSON; GROWTH MECHANISMS; GROWTH MODELS; LATERAL DIMENSION; LAYER-BY-LAYER GROWTH; LOW-DIMENSIONAL STRUCTURES; NUCLEATION RATE; PARTICLE DIAMETERS; SEMI CONDUCTING III-V MATERIALS; TEMPERATURE RANGE;

EPITAXIAL GROWTH; GROWTH RATE; INDIUM ANTIMONIDES; INDIUM ARSENIDE; NANOWIRES;

CHEMICAL BEAM EPITAXY;

EID: 79957983766 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.10.157 Document Type: Article

Times cited : (13)

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