High-quality InAs/InSb nanowire heterostructures grown by metal-organic vapor-phase epitaxy

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Volumn 4, Issue 7, 2008, Pages 878-882

  Caroff, Philippe ^a   Wagner, Jakob B ^a,b   Dick, Kimberly A ^a   Nilsson, Henrik A ^a   Jeppsson, Mattias ^a   Deppert, Knut ^a   Samuelson, Lars ^a   Wallenberg, L Reine ^b   Wernersson, Lars Erik ^a  

^a LUND UNIVERSITY   (Sweden)

^b Box 124   (Sweden)

Author keywords

Heterostructures; Indium antimonide; MOCVD; Nanowires; TEM

Indexed keywords

ARSENIC; COMMUNICATION CHANNELS (INFORMATION THEORY); CONCENTRATION (PROCESS); CRYSTAL GROWTH; ELECTRIC WIRE; EPITAXIAL GROWTH; HETEROJUNCTIONS; INDIUM; INDIUM ARSENIDE; LEAD; METALLORGANIC VAPOR PHASE EPITAXY; METALS; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; NONMETALS; SEMICONDUCTING INDIUM; SEPARATION; STACKING FAULTS; TRACE ANALYSIS; VAPORS; ZINC; ZINC SULFIDE;

ATOMIC PERCENT; FRINGE SEPARATION; HETEROSTRUCTURE NANOWIRES; HIGH QUALITY (HQ); INDIUM CONCENTRATION; LATTICE (CO); LOW DENSITY; METAL ORGANIC (MO); NANOWIRE HETEROSTRUCTURES; NARROW BASE; PARTICLE DIAMETERS; SEGMENT DIAMETER; SWITCHING SEQUENCES; ZINC BLENDE (ZB);

PHASE INTERFACES;

ARSENIC; INDIUM; INDIUM ARSENIDE; METAL NANOPARTICLE; NANOWIRE; ORGANOARSENIC DERIVATIVE; TIN;

ARTICLE; CHEMISTRY; CRYSTALLIZATION; ELECTROCHEMISTRY; EQUIPMENT DESIGN; METHODOLOGY; NANOTECHNOLOGY; TRANSMISSION ELECTRON MICROSCOPY;

ARSENIC; ARSENICALS; CRYSTALLIZATION; ELECTROCHEMISTRY; EQUIPMENT DESIGN; INDIUM; METAL NANOPARTICLES; MICROSCOPY, ELECTRON, TRANSMISSION; NANOTECHNOLOGY; NANOWIRES; TIN;

EID: 48249130047     PISSN: 16136810     EISSN: 16136829     Source Type: Journal    
DOI: 10.1002/smll.200700892     Document Type: Article

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