InAs/AlSb/GaSb resonant interband tunneling diodes and Au-on-InAs/AlSb-superlattice Schottky diodes for logic circuits

IEEE Electron Device Letters

Volumn 17, Issue 2, 1996, Pages 69-71

  Chow, D H ^a   Dunlap, H L ^a   Williamson III, W ^b   Enquist, S ^b   Gilbert, B K ^b   Subramaniam, S ^c   Lei, P M ^c   Bernstein, G H ^c  

^a Hughes Aircraft Co   (United States)

^b MAYO CLINIC   (United States)

^c UNIVERSITY OF NOTRE DAME   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; HETEROJUNCTIONS; LOGIC CIRCUITS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR SUPERLATTICES;

BARRIER HEIGHT; RESONANT INTERBAND TUNNELING DIODES; SUPERLATTICE SCHOTTKY DIODES;

TUNNEL DIODES;

EID: 0030087481     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.484126     Document Type: Article

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