Electrical properties of InAs 1-xSb x and InSb nanowires grown by molecular beam epitaxy

Applied Physics Letters

Volumn 100, Issue 23, 2012, Pages

  Thelander, Claes ^a   Caroff, Philippe ^b   Plissard, Sébastien ^c   Dick, Kimberly A ^a  

^a LUND UNIVERSITY   (Sweden)

^b INSTITUT D ELECTRONIQUE   (France)

^c EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL PHASE; DIAMETER DEPENDENT; ELECTRICAL CHARACTERIZATION; FIELD-EFFECT MOBILITIES; INAS; INSB NANOWIRE; MOBILITY VALUE; POSITIVE SHIFT; WURTZITES;

EPITAXIAL GROWTH; INDIUM ANTIMONIDES; INDIUM ARSENIDE; MOLECULAR BEAM EPITAXY; NANOWIRES; ZINC SULFIDE;

ELECTRIC PROPERTIES;

EID: 84862137591     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4726037     Document Type: Article

References (22)

1. M. Y. Yen, R. People, K. W. Wecht, and A. Y. Cho, Appl. Phys. Lett. 52, 489 (1988). 10.1063/1.99421
2. J. B. Boos, W. Kruppa, B. R. Bennett, D. Park, S. W. Kirchoefer, R. Bass, and H. B. Dietrich, IEEE Trans. Electron Devices 45, 1869 (1998). 10.1109/16.711349
3. J. G. Champlain, R. Magno, R. Bass, D. Park, and J. B. Boos, Electron. Lett. 46, 1333 (2010). 10.1049/el.2010.1727
4. B.-R. Wu, C. Liao, and K. Y. Cheng, Appl. Phys. Lett. 92, 062111 (2008). 10.1063/1.2836947
5. B. M. Borg, K. A. Dick, J. Eymery, and L.-E. Wernersson, Appl. Phys. Lett. 98, 113104 (2011). 10.1063/1.3566980
6. D. Ercolani, M. Gemmi, L. Nasi, F. Rossi, M. Pea1, A. Li, G. Salviati, F. Beltram, and L. Sorba, Nanotechnology 23, 115606 (2012). 10.1088/0957-4484/23/ 11/115606
7. P. Caroff, J. B. Wagner, K. A. Dick, H. A. Nilsson, M. Jeppsson, K. Deppert, L. Samuelson, L. R. Wallenberg, and L.-E. Wernersson, Small 4, 878 (2008). 10.1002/smll.200700892
8. S. Csonka, L. Hofstetter, F. Freitag, S. Oberholzer, C. Schonenberger, T. S. Jespersen, M. Aagesen, and J. Nygård, Nano Lett. 8, 3932 (2008). 10.1021/nl802418w
9. H. A. Nilsson, P. Caroff, C. Thelander, M. Larsson, J. B. Wagner, L.-E. Wernersson, L. Samuelson, and H. Q. Xu, Nano Lett. 9, 3151 (2009). 10.1021/nl901333a
10. S. Nadj-Perge, S. M. Frolov, E. P. A. M. Bakkers, and L. P. Kouwenhoven, Nature (London) 468, 1084 (2010). 10.1038/nature09682
11. V. Mourik, K. Zuo, S. M. Frolov, S. R. Plissard, E. P. A. M. Bakkers, and L. P. Kouwenhoven, Science 336, 1003 (2012). 10.1126/science.1222360
12. C. Thelander, K. A. Dick, M. T. Borgstrom, L. E. Froberg, P. Caroff, H. A. Nilsson, and L. Samuelson, Nanotechnology 21, 205703 (2010). 10.1088/0957-4484/21/20/205703
13. M. Scheffler, S. Nadj-Perge, L. P. Kouwenhoven, M. T. Borgström, and E. P. A. M. Bakkers, J. Appl. Phys. 106, 124303 (2009). 10.1063/1.3270259
14. C. Thelander, P. Caroff, S. Plissard, A. W. Dey, and K. A. Dick, Nano Lett. 11, 2424 (2011). 10.1021/nl2008339
15. L. Lugani, D. Ercolani, F. Rossi, G. Salviati, F. Beltram, and L. Sorba, Cryst. Growth. Des. 10, 4038 (2010). 10.1021/cg1006814
16. T. Xu, K. A. Dick, S. Plissard, T. H. Nguyen, Y. Makoudi, M. Berthe, J.-P. Nys, X. Wallart, B. Grandidier, and P. Caroff, Nanotechnology 23, 095702 (2012). 10.1088/0957-4484/23/9/095702
17. Y. Wang, J. Chi, K. Banerjee, D. Grutzmacher, T. Schapers, and J. G. Lu, J. Mater. Chem. 21, 2459 (2011). 10.1039/c0jm03855e
18. S. R. Das, C. J. Delker, D. Zakharov, Y. P. Chen, T. D. Sands, and D. B. Janes, Appl. Phys. Lett. 98, 243504 (2011). 10.1063/1.3587638
19. H. A. Nilsson, P. Caroff, C. Thelander, E. Lind, O. Karlstrom, and L.-E. Wernersson, Appl. Phys. Lett. 96, 153505 (2010). 10.1063/1.3402760
20. O. Wunnicke, Appl. Phys. Lett. 89, 083102 (2006). 10.1063/1.2337853
21. S.-H. Wei and A. Zunger, Phys. Rev. B. 52, 12039 (1995). 10.1103/PhysRevB.52.12039
22. S. R. Kurtz, L. R. Dawson, R. M. Biefeld, D. M. Follstaedt, and B. L. Doyle, Phys. Rev. B 46, 1909 (1992). 10.1103/PhysRevB.46.1909