Influence of doping on the electronic transport in GaSb/InAs(Sb) nanowire tunnel devices

Applied Physics Letters

Volumn 101, Issue 4, 2012, Pages

  Borg, B Mattias ^a,b   Ek, Martin ^a   Ganjipour, Bahram ^a   Dey, Anil W ^a   Dick, Kimberly A ^a   Wernersson, Lars Erik ^a   Thelander, Claes ^a  

^a LUND UNIVERSITY   (Sweden)

^b IBM RESEARCH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT LEVELS; DOPING PROFILES; ELECTRONIC TRANSPORT; INAS; N-DOPING; PEAK CURRENT DENSITY; PEAK CURRENTS; REVERSE BIAS;

HETEROJUNCTIONS; INDIUM ARSENIDE; TUNNEL DIODES; ZINC;

NANOWIRES;

EID: 84864468524     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4739082     Document Type: Article

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