Fabrication of high-quality InSb nanowire arrays by chemical beam epitaxy

Crystal Growth and Design

Volumn 11, Issue 5, 2011, Pages 1896-1900

  Vogel, Alexander T ^a   Boor, Johannes De ^a   Wittemann, Joerg V ^a   Mensah, Samuel L ^a   Werner, Peter ^a   Schmidt, Volker ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BULK-LIKE; ELECTRICAL MEASUREMENT; GROWTH PARAMETERS; HIGH QUALITY; INSB NANOWIRE; LASER INTERFERENCE LITHOGRAPHY; LOW TEMPERATURES; TEMPERATURE DEPENDENT; THIN-FILM DEPOSITIONS;

DEPOSITION; ELECTRIC WIRE; EPITAXIAL GROWTH; INDIUM ANTIMONIDES; NANOWIRES; STACKING FAULTS;

CHEMICAL BEAM EPITAXY;

EID: 79957938587     PISSN: 15287483     EISSN: 15287505     Source Type: Journal    
DOI: 10.1021/cg200066q     Document Type: Article

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