Antimony segregation in GaAs-based multiple quantum well structures

Journal of Crystal Growth

Volumn 254, Issue 1-2, 2003, Pages 28-34

  Pitts, O J ^a   Watkins, S P ^a   Wang, C X ^a   Fink, V ^a   Kavanagh, K L ^a  

^a SIMON FRASER UNIVERSITY   (Canada)

Author keywords

A1. Segregation; A3. Organometallic vapor phase epitaxy; B2. Semiconducting III V materials

Indexed keywords

SEGREGATION (METALLOGRAPHY); SEMICONDUCTING GALLIUM ARSENIDE; VAPOR PHASE EPITAXY; X RAY DIFFRACTION;

ORGANOMETALLIC VAPOR PHASE EPITAXY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0037609792     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)01164-3     Document Type: Article

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