Doping of semiconductor nanowires

Journal of Materials Research

Volumn 26, Issue 17, 2011, Pages 2142-2156

  Wallentin, Jesper ^a   Borgström, Magnus T ^a  

^a LUND UNIVERSITY   (Sweden)

Author keywords

Dopant; Electrical properties; Epitaxy

Indexed keywords

COMPLEX EFFECTS; DOPANT INCORPORATION; IMPURITY DOPING; IN-SITU DOPING; NANOWIRE GROWTH; SEMICONDUCTOR NANOWIRE;

DOPING (ADDITIVES); ELECTRIC PROPERTIES; EPITAXIAL GROWTH; FILM GROWTH; NANOWIRES; SEMICONDUCTOR DEVICES;

SEMICONDUCTOR DOPING;

EID: 84855732053     PISSN: 08842914     EISSN: 20445326     Source Type: Journal    
DOI: 10.1557/jmr.2011.214     Document Type: Review

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