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Volumn 11, Issue 10, 2011, Pages 4588-4593

Formation of the axial heterojunction in GaSb/InAs(Sb) nanowires with high crystal quality

Author keywords

[No Author keywords available]

Indexed keywords

BINARY MATERIALS; CRYSTAL QUALITIES; HIGH SOLUBILITY; INAS; METAL-ORGANIC VAPOR PHASE EPITAXY; NANOWIRE HETEROSTRUCTURES; POTENTIAL APPLICATIONS; SEED PARTICLE; SHARP TRANSITION; TUNNELING DEVICE; ZINCBLENDE CRYSTALS;

EID: 80053555253     PISSN: 15287483     EISSN: 15287505     Source Type: Journal    
DOI: 10.1021/cg200829q     Document Type: Article
Times cited : (38)

References (32)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.