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Volumn 310, Issue 18, 2008, Pages 4115-4121

GaAs/GaSb nanowire heterostructures grown by MOVPE

Author keywords

A1. Nanowires; A3. Heterostructures; A3. Metal organic vapor phase epitaxy; B1. Antimonides; B1. Gallium antimonide

Indexed keywords

CRYSTAL GROWTH; CRYSTALS; ECOLOGY; ELECTRIC WIRE; EPITAXIAL GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; METALS; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES;

EID: 49749084693     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.06.066     Document Type: Article
Times cited : (92)

References (37)
  • 17
    • 49749107601 scopus 로고    scopus 로고
    • L.S. Karlsson, K.A. Dick, K. Deppert, J.-O. Malm, L. Samuelson, L.R. Wallenberg, manuscript in progress.
    • L.S. Karlsson, K.A. Dick, K. Deppert, J.-O. Malm, L. Samuelson, L.R. Wallenberg, manuscript in progress.
  • 34
    • 0030353924 scopus 로고    scopus 로고
    • A. Subekti, E.M. Goldys, T.L. Tansley, in: Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, 1996, p. 426.
    • A. Subekti, E.M. Goldys, T.L. Tansley, in: Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, 1996, p. 426.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.