Anomalous zero-bias conductance peak in a Nb-InSb nanowire-Nb hybrid device

Nano Letters

Volumn 12, Issue 12, 2012, Pages 6414-6419

  Deng, M T ^a   Yu, C L ^a   Huang, G Y ^a   Larsson, M ^a   Caroff, P ^b   Xu, H Q ^a,c  

^a LUND UNIVERSITY   (Sweden)

^b INSTITUT D ELECTRONIQUE   (France)

^c PEKING UNIVERSITY   (China)

Author keywords

InSb nanowire; Majorana fermion; topological superconductor; zero bias conductance peak

Indexed keywords

APPLIED MAGNETIC FIELDS; BACKGATE VOLTAGE; CONDUCTANCE PEAKS; CRITICAL VALUE; HYBRID DEVICES; INSB NANOWIRE; LOW BACK; MAJORANA; PERPENDICULAR MAGNETIC FIELDS; PROXIMITY EFFECTS; QUANTUM DEVICE; QUASI PARTICLES; SOLID-STATE SYSTEM; SUPERCONDUCTING ENERGY GAP; SUPERCURRENTS; TRANSPORT CHARACTERISTICS; TRANSPORT MEASUREMENTS; TUNNELING BARRIER; ZEEMAN ENERGIES; ZERO BIAS CONDUCTANCE PEAKS; ZERO MAGNETIC FIELDS; ZERO-BIAS VOLTAGE;

BIAS VOLTAGE; MAGNETIC FIELDS; NANOWIRES; SEMICONDUCTOR QUANTUM DOTS; SUPERCONDUCTING MATERIALS; SUPERCONDUCTING TAPES; SUPERCONDUCTIVITY; TOPOLOGY;

INDIUM ANTIMONIDES;

EID: 84870902104     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl303758w     Document Type: Article

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