Chemical vapor deposition and electrical characterization of sub-10 nm diameter InSb nanowires and field-effect transistors

Materials Chemistry and Physics

Volumn 121, Issue 3, 2010, Pages 397-401

  Paul, Rajat Kanti ^a   Penchev, Miroslav ^b   Zhong, Jiebin ^a   Ozkan, Mihrimah ^b   Ghazinejad, Maziar ^a   Jing, Xiaoye ^b   Yengel, Emre ^b   Ozkan, Cengiz S ^a  

^a University of California Riverside   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Crystal structure; CVD; Field effect transistor; InSb nanowires; Semiconductor

Indexed keywords

AMORPHOUS LAYER; AU PARTICLES; CHEMICAL VAPOR; DEVICE CHARACTERIZATION; DEVICE RESISTANCE; ELECTRICAL CHARACTERIZATION; HIGH ASPECT RATIO; INSB NANOWIRE; METAL CATALYST;

ASPECT RATIO; CATALYSTS; CHEMICAL VAPOR DEPOSITION; ELECTRIC WIRE; FIELD EFFECT TRANSISTORS; INDIUM ANTIMONIDES; NANOWIRES; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; STACKING FAULTS; SYNTHESIS (CHEMICAL); ZINC;

CRYSTAL STRUCTURE;

EID: 77950296462     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2010.01.056     Document Type: Article

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