Direct imaging of single Au atoms within GaAs nanowires

Nano Letters

Volumn 12, Issue 5, 2012, Pages 2352-2356

  Bar Sadan, Maya ^a,b   Barthel, Juri ^a   Shtrikman, Hadas ^c   Houben, Lothar ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b BEN GURION UNIVERSITY OF THE NEGEV   (Israel)

^c WEIZMANN INSTITUTE OF SCIENCE   (Israel)

Author keywords

dopants; nanowires; scanning transmission electron microscopy; Single atom detection; transport phenomena

Indexed keywords

ABERRATION-CORRECTED; BALLISTIC TRANSPORTS; DENSE MATRICES; DIRECT IMAGING; ELECTRON MEAN FREE PATH; GAAS; GAAS CRYSTALS; GROWTH PROCESS; INCIDENT ELECTRON BEAMS; LATTICE PLANE; SCANNING TRANSMISSION ELECTRON MICROSCOPY; SEMICONDUCTOR NANOWIRE; SINGLE ATOM DETECTION; TRANSPORT PHENOMENA;

ATOMS; DOPING (ADDITIVES); ELECTRON BEAMS; ELECTRONIC PROPERTIES; GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY; TRANSPORT PROPERTIES;

NANOWIRES;

EID: 84861015800     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl300314k     Document Type: Article

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