Effect of reactor pressure on catalyst composition and growth of GaSb nanowires

Journal of Crystal Growth

Volumn 312, Issue 4, 2010, Pages 514-519

  Weng, Xiaojun ^a   Burke, Robert A ^a   Dickey, Elizabeth C ^a   Redwing, Joan M ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

A3. Metalorganic chemical vapor deposition; B1. Antimonides; B1. Nanomaterials; B2. Semiconducting III V materials

Indexed keywords

A3.METALORGANIC CHEMICAL VAPOR DEPOSITION; ANTIMONIDES; CATALYST COMPOSITION; CATALYST PARTICLES; METALORGANIC CHEMICAL VAPOR DEPOSITION; NANO-MATERIALS; NANOWIRE GROWTH; REACTOR PRESSURES; SELF-CATALYTIC; SEMI CONDUCTING III-V MATERIALS; V/III RATIO; VAPOR-LIQUID-SOLID; VLS MECHANISM; X-RAY ENERGY DISPERSIVE SPECTROMETRY;

CATALYSIS; CATALYSTS; CONTACT ANGLE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOSTRUCTURED MATERIALS; NANOWIRES; PRESSURE EFFECTS; SEMICONDUCTOR GROWTH;

GALLIUM ALLOYS;

EID: 74549210209     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.11.035     Document Type: Article

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