SCOPUS 정보 검색 플랫폼

Volumn 99, Issue 20, 2011, Pages

Diameter reduction of nanowire tunnel heterojunctions using in situ annealing

(7) Mattias Borg, B a Ek, Martin a Dick, Kimberly A a Ganjipour, Bahram a Dey, Anil W a Thelander, Claes a Wernersson, Lars Erik a

a LUND UNIVERSITY (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE PERFORMANCE; DIAMETER REDUCTION; ETCHING MECHANISM; HETERO INTERFACES; HIGH-PEAK CURRENTS; IN-SITU; IN-SITU ANNEALING; MATERIAL REMOVAL; PARALLEL CONDUCTION; PEAK-TO-VALLEY RATIOS; SELECTIVE ETCHING;

ETCHING; INDIUM ANTIMONIDES; NANOWIRES; TUNNEL DIODES;

HETEROJUNCTIONS;

EID: 81855187166 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3662009 Document Type: Article

Times cited : (15)

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