RF characterization of vertical InAs nanowire wrap-gate transistors integrated on Si substrates

IEEE Transactions on Microwave Theory and Techniques

Volumn 59, Issue 10 PART 2, 2011, Pages 2733-2738

  Johansson, S ^a   Egard, M ^a   Ghalamestani, S G ^a   Borg, B M ^a   Berg, M ^a   Wernersson, L ^a   Lind, E ^a  

^a LUND UNIVERSITY   (Sweden)

Author keywords

High k; InAs; MOSFET; Nanowire; RF

Indexed keywords

HIGH-K; HIGH-K GATE DIELECTRICS; INAS; INAS NANOWIRE FIELD-EFFECT TRANSISTORS; MAXIMUM OSCILLATION FREQUENCY; MOS-FET; RF; S-PARAMETER MEASUREMENTS;

CUTOFF FREQUENCY; FIELD EFFECT TRANSISTORS; HAFNIUM OXIDES; SCATTERING PARAMETERS; SILICON;

NANOWIRES;

EID: 83455203427     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2011.2163076     Document Type: Article

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