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Journal of Materials Chemistry

Volumn 21, Issue 8, 2011, Pages 2459-2462

Field effect transistor based on single crystalline InSb nanowire

(6) Wang, Yennai a Chi, Junhong a Banerjee, Karan a Grützmacher, Detlev b Schäpers, Thomas b Lu, Jia G a

a UNIVERSITY OF SOUTHERN CALIFORNIA (United States)

b FORSCHUNGSZENTRUM JÜLICH (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANTI-STOKES; ASYMMETRIC BROADENING; ENHANCED SURFACE; INSB NANOWIRE; LASER CHEMICAL VAPOR DEPOSITION; N-TYPE SEMICONDUCTORS; SINGLE-CRYSTALLINE; SIZE CONFINEMENT; TRANSVERSE OPTICAL; ZINC-BLENDE;

CHEMICAL VAPOR DEPOSITION; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; INDIUM ANTIMONIDES; NANOWIRES; RAMAN SPECTROSCOPY; STOICHIOMETRY;

CRYSTAL STRUCTURE;

EID: 79751486198 PISSN: 09599428 EISSN: 13645501 Source Type: Journal
DOI: 10.1039/c0jm03855e Document Type: Article

Times cited : (64)

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