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Volumn 9, Issue 11, 2009, Pages 3689-3693

Junctions in axial III - V heterostructure nanowires obtained via an interchange of group III elements

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER MATERIAL; CATALYST PARTICLES; GROUP III; GROWTH INTERFACES; HETEROSTRUCTURES; INAS; INTERFACE DIFFUSION; MORPHOLOGY AND COMPOSITION; NANOWIRE HETEROSTRUCTURES; SCANNING TRANSMISSION ELECTRON MICROSCOPY; STRAIGHT NANOWIRES; VOLUME DIFFUSION;

EID: 72849146240     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl901348d     Document Type: Article
Times cited : (89)

References (27)
  • 13
    • 0012866864 scopus 로고
    • Properties of lattice-matched and strained InGaAs
    • Bhattacharya, P, Ed.; Inspec; London, Emis Datareviews series Chapter 3.
    • Singh, J. Properties of lattice-matched and strained InGaAs. Inspec; Bhattacharya, P, Ed.; Inspec; London, 1993; Emis Datareviews series No.8, Chapter 3.
    • (1993) Inspec , Issue.8
    • Singh, J.1
  • 22
    • 0004255385 scopus 로고
    • 2nd ed.; TMS publications: Warrendale, PA
    • Shewmon, P. Diffusion in Solids, 2nd ed.; TMS publications: Warrendale, PA, 1989.
    • (1989) Diffusion in Solids
    • Shewmon, P.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.