Electrochemical growth of InSb nanowires and report of a single nanowire field effect transistor

Journal of Nanoelectronics and Optoelectronics

Volumn 3, Issue 2, 2008, Pages 199-202

  Khan, M Ibrahim ^a   Penchev, Miroslav ^a   Jing, Xiaoye ^a   Wang, Xu ^a   Bozhilov, Krassimir N ^b   Ozkan, Mihrimah ^a   Ozkan, Cengiz S ^a  

^a University of California Riverside   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

InSb; Nanowire; Templated assembly; Transistor

Indexed keywords

ELECTRIC WIRE; ELECTROCHEMISTRY; ELECTRON MULTIPLIERS; HOLE MOBILITY; NANOWIRES; SYNTHESIS (CHEMICAL);

ANODIC ALUMINA MEMBRANES; AS-GROWN; BACK GATES; CRYSTALLINE PROPERTIES; DEVICE FABRICATIONS; DIRECT-CURRENT ELECTRODEPOSITIONS; ELECTROCHEMICAL GROWTHS; GOLD SOURCES; INSB; INSB NANOWIRES; NANO-CHANNELS; NANOWIRE; NANOWIRE SYNTHESIS; ROOM TEMPERATURES; SILICON SUBSTRATES; SINGLE NANOWIRES; STRUCTURAL QUALITIES; TEMPLATED ASSEMBLY;

FIELD EFFECT TRANSISTORS;

EID: 62549140530     PISSN: 1555130X     EISSN: None     Source Type: Journal    
DOI: 10.1166/jno.2008.203     Document Type: Article

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