InAs/InP/InSb Nanowires as Low Capacitance n-n Heterojunction Diodes

Physical Review X

Volumn 1, Issue 1, 2011, Pages 1-7

  Pitanti, A ^a   Ercolani, D ^a   Sorba, L ^a   Roddaro, S ^a   Beltram, F ^a   Nasi, L ^b   Salviati, G ^b   Tredicucci, A ^a  

^a SCUOLA NORMALE SUPERIORE   (Italy)

^b IMEM CNR   (Italy)

Author keywords

Electronics; Nanophysics; Semiconductor Physics

Indexed keywords

BAND ALIGNMENTS; BROKEN GAPS; BUILDING BLOCKES; HETEROJUNCTION DIODES; INAS; INP; IV CHARACTERISTICS; NANOPHYSICS; RECTIFICATION EFFECTS; REVERSE BIAS; ROOM TEMPERATURE; SEMICONDUCTOR PHYSICS; SPECTRAL RANGE; ULTRA-FAST;

ELECTRONIC EQUIPMENT; HETEROJUNCTIONS; INDIUM ANTIMONIDES; INDIUM ARSENIDE; SEMICONDUCTOR DIODES;

NANOWIRES;

EID: 84865076762     PISSN: None     EISSN: 21603308     Source Type: Journal    
DOI: 10.1103/PhysRevX.1.011006     Document Type: Article

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