High quality InAs and GaSb thin layers grown on Si (1 1 1)

Journal of Crystal Growth

Volumn 332, Issue 1, 2011, Pages 12-16

  Gorji Ghalamestani, Sepideh ^a   Berg, Martin ^b   Dick, Kimberly A ^a   Wernersson, Lars Erik ^b  

^a LUND UNIVERSITY   (Sweden)

^b Box 118   (Sweden)

Author keywords

A1. Nucleation; A3. Metalorganic vapor phase epitaxy; B1. Gallium antimonide; B1. Indium arsenide

Indexed keywords

A1. NUCLEATION; ATOMIC STEP; B1. GALLIUM ANTIMONIDE; B1. INDIUM ARSENIDE; DEPOSITED LAYER; GROWTH PROCESS; HIGH QUALITY; INAS; MAIN PARAMETERS; MATERIAL FLOW; METAL-ORGANIC VAPOR PHASE EPITAXY; NUCLEATION LAYERS; NUCLEATION STAGES; SI (1 1 1); STRUCTURAL CHARACTERIZATION; THIN EPITAXIAL LAYER; THIN LAYERS; TWO-STEP GROWTH;

ARSENIC COMPOUNDS; CARRIER CONCENTRATION; CARRIER MOBILITY; EPITAXIAL GROWTH; EPITAXIAL LAYERS; GALLIUM; INDIUM ARSENIDE; METALLORGANIC VAPOR PHASE EPITAXY; NANOWIRES; NUCLEATION; SEMICONDUCTING INDIUM; SEMICONDUCTING SILICON COMPOUNDS; THIN FILMS; VAPORS;

GALLIUM ALLOYS;

EID: 81155160903     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.03.062     Document Type: Article

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