Interaction of NiSi with dopants for metallic source/drain applications

Journal of Vacuum Science and Technology B

Volumn 28, Issue 1, 2010, Pages

  Luo, Jun ^a,b   Qiu, Zhi Jun ^a   Zhang, Zhen ^b,d   Östling, Mikael ^b   Zhang, Shi Li ^a,b,c  

^a FUDAN UNIVERSITY   (China)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^c UPPSALA UNIVERSITY   (Sweden)

^d IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOYING; CMOS INTEGRATED CIRCUITS; DOPING (ADDITIVES); FIELD EFFECT TRANSISTORS; METALS; MOS DEVICES; OXIDE SEMICONDUCTORS; PASSIVATION; SILICIDES; SILICON; SURFACE SEGREGATION;

CARRIER INJECTION; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS DEVICES; CONDUCTION CHANNEL; DOPANT SEGREGATION; METALLIC CONTACTS; METALLICS; SCHOTTKY-BARRIER HEIGHTS; SOURCE-DRAIN; SURFACE ALLOYING; SURFACE PASSIVATION;

SCHOTTKY BARRIER DIODES;

EID: 77949392162     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3248267     Document Type: Conference Paper

References (90)

1. S.-L. Zhang and M. Östling, Crit. Rev. Solid State Mater. Sci. CCRSDA 1040-8436 28, 1 (2003). 10.1080/10408430390802431
2. S.-L. Zhang and U. Smith, J. Vac. Sci. Technol. A JVTAD6 0734-2101 22, 1361 (2004). 10.1116/1.1688364
3. C. Lavoie, F. M. d'Heurle, and S.-L. Zhang, in Handbook of Semiconductor Manufacturing Technology, 2nd ed., edited by, Y. Nishi, and, R. Doering, (Taylor & Francis, New York / CRC, Boca Raton, FL, 2007), Chap..
4. T. Shibata, K. Hieda, M. Sato, M. Konaka, R. L. M. Dang, and H. Iizuka, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 1981, 647.
5. C. K. Lau, Y. C. See, D. B. Scott, J. M. Bridges, S. M. Perna, and R. D. Davies, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 1982, 714-717.
6. C. M. Osburn, M. Y. Tsai, S. Roberts, C. J. Lucchese, and C. Y. Ting, in VLSI Science and Technology, edited by, C. Dell'Oca, and, W. M. Bullis, (The Electrochem. Soc., Inc., Pennington, 1982), pp. 213-223.
7. M. Qin, V. M. Poon, and S. C. H. Ho, J. Electrochem. Soc. JESOAN 0013-4651 148, G271 (2001). 10.1149/1.1362551
8. J. Kedzierski, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2002, 247.
9. Z. Krivokapic, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2002, 271.
10. J. Kedzierski, P. Xuan, E. H. Anderson, J. Bokor, T.-J. King, and C. M. Hu, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2000, 57.
11. Y.-C. Yeo, P. Ranade, T.-J. King, and C. Hu, IEEE Electron Device Lett. EDLEDZ 0741-3106 23, 342 (2002). 10.1109/LED.2002.1004229
12. Y.-C. Yeo, T.-J. King, and C. Hu, J. Appl. Phys. JAPIAU 0021-8979 92, 7266 (2002). 10.1063/1.1521517
13. J. A. Kittl, IEEE Electron Device Lett. EDLEDZ 0741-3106 27, 34 (2006). 10.1109/LED.2005.861404
14. G. Pourtois, A. Lauwers, J. Kittl, L. Pantisano, B. Soŕe, S. De Gendt, W. Magnus, M. Heyns, and K. Maex, Microelectron. Eng. MIENEF 0167-9317 80, 272 (2005). 10.1016/j.mee.2005.04.080
15. J. Knoch and J. Appenzeller, Appl. Phys. Lett. APPLAB 0003-6951 81, 3082 (2002). 10.1063/1.1513657
16. J. Knoch, M. Zhang, S. Mantl, and J. Appenzeller, IEEE Trans. Electron Devices IETDAI 0018-9383 53, 1669 (2006). 10.1109/TED.2006.877262
17. J. M. Larson and J. P. Snyder, IEEE Trans. Electron Devices IETDAI 0018-9383 53, 1048 (2006), and references therein. 10.1109/TED.2006.871842
18. S. Xiong, T. J. King, and J. Bokor, IEEE Trans. Electron Devices IETDAI 0018-9383 52, 1859 (2005). 10.1109/TED.2005.852893
19. R. A. Vega, IEEE Trans. Electron Devices IETDAI 0018-9383 53, 1593 (2006). 10.1109/TED.2006.876261
20. R. A. Vega and T.-J. King Liu, IEEE Trans. Electron Devices IETDAI 0018-9383 55, 2665 (2008). 10.1109/TED.2008.2003024
21. T.-J. Wang, C.-H. Ko, H.-N. Lin, S.-J. Chang, S.-L. Wu, T.-M. Kuan, and W.-C. Lee, IEEE Trans. Electron Devices IETDAI 0018-9383 55, 3221 (2008). 10.1109/TED.2008.2004245
22. M. Craig, A. Sultan, and S. Banerjee, Proceedings of the 11th International Conference on Ion Implantation Technology, 16-21 June 1996 (unpublished), pp. 665-667.
23. B. J. Pawlak, T. Janssens, B. Brijs, W. Vandervorst, E. J. H. Collart, S. B. Felch, and N. E. B. Cowern, Appl. Phys. Lett. APPLAB 0003-6951 89, 062110 (2006). 10.1063/1.2227863
24. B. J. Pawlak, R. Duffy, T. Janssens, W. Vandervorst, S. B. Felch, E. J. H. Collart, and N. E. B. Cowern, Appl. Phys. Lett. APPLAB 0003-6951 89, 062102 (2006). 10.1063/1.2234315
25. S. Nakashima, M. Takahashi, S. Nakayama, and T. Ohno, Proceedings of the International Conference on Ion Implantation Technology, 1999 (unpublished), pp. 122-125.
26. S. Zhu, IEEE Electron Device Lett. EDLEDZ 0741-3106 25, 268 (2004). 10.1109/LED.2004.826569
27. S. Zhu, IEEE Electron Device Lett. EDLEDZ 0741-3106 25, 565 (2004). 10.1109/LED.2004.831582
28. S. Cristoloveanu, Solid-State Electron. SSELA5 0038-1101 45, 1403 (2001). 10.1016/S0038-1101(00)00271-9
29. D. Hisamoto, IEEE Electron Device Lett. EDLEDZ 0741-3106 47, 2320 (2000).
30. A. Kaneko, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2006, 893.
31. C. S. Petersson, J. E. Baglin, W. Hammer, F. M. d'Heurle, T. S. Kuan, I. Odhomari, J. de Sousa Pires, and P. Tove, J. Appl. Phys. JAPIAU 0021-8979 50, 3357 (1979). 10.1063/1.326325
32. M.-A. Nicolet and S. S. Lau, in VLSI Electronics: Microstructure Sciences, edited by, N. G. Einsprich, and, G. B. Larrabee, (Academic, New York, 1983), Vol. 6, Chap..
33. Properties of Metal Silicides, EMIS Datareviews Series No. 14, edited by, K. Maex, and, M. van Rossum, (INSPEC, London, 1995).
34. R. T. Tung, Mater. Sci. Eng. R. MIGIEA 0927-796X 35, 1 (2001). 10.1016/S0927-796X(01)00037-7
35. K. N. Tu, R. D. Thompson, and B. Y. Tsaur, Appl. Phys. Lett. APPLAB 0003-6951 38, 626 (1981). 10.1063/1.92457
36. H. Norde, J. de Sousa Pires, F. d'Heurle, F. Pesavento, S. Petersson, and P. A. Tove, Appl. Phys. Lett. APPLAB 0003-6951 38, 865 (1981). 10.1063/1.92201
37. F. M. d'Heurle, J. Mater. Res. JMREEE 0884-2914 3, 167 (1988). 10.1557/JMR.1988.0167
38. M. Tao, D. Udeshi, N. Basit, E. Maldonado, and W. P. Kirk, Appl. Phys. Lett. APPLAB 0003-6951 82, 1559 (2003). 10.1063/1.1559418
39. M. Tao, S. Agarwal, D. Udeshi, N. Basit, E. Maldonado, and W. P. Kirk, Appl. Phys. Lett. APPLAB 0003-6951 83, 2593 (2003). 10.1063/1.1613357
40. Q. T. Zhao, U. Breuer, E. Rije, St. Lenk, and S. Mantl, Appl. Phys. Lett. APPLAB 0003-6951 86, 062108 (2005). 10.1063/1.1863442
41. G. Song, M. Y. Ali, and M. Tao, IEEE Electron Device Lett. EDLEDZ 0741-3106 28, 71 (2007). 10.1109/LED.2006.887942
42. H.-S. Wong, L. Chan, G. Samudra, and Y.-C. Yeo, IEEE Electron Device Lett. EDLEDZ 0741-3106 28, 1102 (2007). 10.1109/LED.2007.910003
43. H.-S. Wong, L. Chan, G. Samudra, and Y.-C. Yeo, Appl. Phys. Lett. APPLAB 0003-6951 93, 072103 (2008). 10.1063/1.2970958
44. H.-S. Wong, L. Chan, G. Samudra, and Y.-C. Yeo, IEEE Electron Device Lett. EDLEDZ 0741-3106 28, 703 (2007). 10.1109/LED.2007.901668
45. Z. Zhang, Z. Qiu, R. Liu, M. Östling, and S.-L. Zhang, IEEE Electron Device Lett. EDLEDZ 0741-3106 28, 565 (2007). 10.1109/LED.2007.900295
46. Z. J. Qiu, Z. Zhang, M. Östling, and S.-L. Zhang, IEEE Trans. Electron Devices IETDAI 0018-9383 55, 396 (2008). 10.1109/TED.2007.911080
47. J. Luo, Z. J. Qiu, D. W. Zhang, P.-E. Hellström, M. Östling, and S.-L. Zhang, IEEE Electron Device Lett. EDLEDZ 0741-3106 30, 608 (2009). 10.1109/LED.2009.2018285
48. L. E. Terry and J. Saltich, Appl. Phys. Lett. APPLAB 0003-6951 28, 229 (1976). 10.1063/1.88708
49. L. J. Jin, K. L. Pey, W. K. Choi, D. A. Antoniadis, E. A. Fitzgerald, and D. Z. Chi, Thin Solid Films THSFAP 0040-6090 504, 149 (2006). 10.1016/j.tsf.2005.09.063
50. Y. Nishi, Y. Tsuchiya, A. Kinoshita, T. Yamauchi, and J. Koga, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2007, 135.
51. R. T. P. Lee, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2006, 851.
52. M. Sinha, E. F. Chor, and Y.-C. Yeo, Appl. Phys. Lett. APPLAB 0003-6951 92, 222114 (2008). 10.1063/1.2940596
53. A. Kinoshita, Y. Tsuchiya, A. Yagashita, K. Uchida, and J. Koga, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2004, 168.
54. B. Tsui and C. Lin, IEEE Electron Device Lett. EDLEDZ 0741-3106 25, 430 (2004). 10.1109/LED.2004.828980
55. C.-P. Lin and B.-Y. Tsui, Symp. VLSI Tech. Dig. of Tech. Pap. 2005, 118.
56. A. Kinoshita, C. Tanaka, K. Uchida, and J. Koga, Symp. VLSI Tech. Dig. of Tech. Pap 2005, 158.
57. C.-P. Lin and B.-Y. Tsui, IEEE Electron Device Lett. EDLEDZ 0741-3106 26, 394 (2005). 10.1109/LED.2005.848096
58. M. Zhang, J. Knoch, Q. T. Zhao, S. Lenk, U. Breuer, and S. Mantl, Proceedings of ESSDERC, 2005 (unpublished), pp. 457-460.
59. M. Zhang, J. Knoch, Q. T. Zhao, U. Breuer, and S. Mantl, Solid-State Electron. SSELA5 0038-1101 50, 594 (2006). 10.1016/j.sse.2006.03.016
60. L. K. Bera, Proceedings of ESSDERC, 2006 (unpublished), pp. 290-293.
61. T. Kinoshita, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2006, 71.
62. A. Kinoshita, T. Kinoshita, Y. Nishi, K. Uchida, S. Toriyama, R. Hasumi, and J. Koga, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2006, 79.
63. G. Larrieu, E. Dubois, R. Valentin, N. Breil, F. Danneville, G. Dambrine, J. P. Raskin, and J. C. Pesant, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2007, 147.
64. Z. Zhang, Z. Qiu, P.-E. Hellström, G. Malm, J. Olsson, J. Lu, M. Östling, and S.-L. Zhang, IEEE Electron Device Lett. EDLEDZ 0741-3106 29, 125 (2008). 10.1109/LED.2007.911990
65. Z. Zhang, J. Lu, Z. Qiu, P.-E. Hellström, M. Östling, and S.-L. Zhang, IEEE Electron Device Lett. EDLEDZ 0741-3106 29, 506 (2008). 10.1109/LED.2008.920284
66. H.-S. Wong, F.-Y. Liu, K.-W. Ang, G. Samudra, and Y.-C. Yeo, IEEE Electron Device Lett. EDLEDZ 0741-3106 29, 841 (2008). 10.1109/LED.2008.2000716
67. M. Sinha, R. T. P. Lee, K.-M. Tan, G.-Q. Lo, E. F. Chor, and Y.-C. Yeo, IEEE Electron Device Lett. EDLEDZ 0741-3106 30, 85 (2009). 10.1109/LED.2008. 2008826
68. V. Gudmundsson, P.-E. Hellström, J. Luo, S.-L. Zhang, and M. Östling, IEEE Electron Device Lett. EDLEDZ 0741-3106 30, 541 (2009). 10.1109/LED.2009.2015900
69. M. Wittmer and T. E. Seidel, J. Appl. Phys. JAPIAU 0021-8979 49, 5827 (1978). 10.1063/1.324599
70. R. L. Thornton, Electron. Lett. ELLEAK 0013-5194 17, 485 (1981). 10.1049/el:19810337
71. M. Wittmer and K. N. Tu, Phys. Rev. B PRBMDO 0163-1829 29, 2010 (1984). 10.1103/PhysRevB.29.2010
72. D. L. Kwong, Y. H. Ku, S. K. Lee, E. Louis, N. S. Alvi, and P. Chu, J. Appl. Phys. JAPIAU 0021-8979 61, 5084 (1987). 10.1063/1.338333
73. C. M. Osburn, J. Y. Tsai, and J. Sun, J. Electron. Mater. JECMA5 0361-5235 25, 1725 (1996). 10.1007/s11664-996-0028-x
74. H. Jiang, C. M. Osburn, P. Smith, Z.-G. Xiao, D. Griffis, G. McGuire, and G. A. Rozgonyi, J. Electrochem. Soc. JESOAN 0013-4651 139, 196 (1992); 10.1149/1.2069169 H. Jiang, C. M. Osburn, Z.-G. Xiao, G. McGuire, and G. A. Rozgonyi, J. Electrochem. Soc. JESOAN 0013-4651 139, 206 (1992); 10.1149/1.2069171 H. Jiang, C. M. Osburn, Z.-G. Xiao, G. McGuire, G. A. Rozgonyi, B. Patnaik, N. Parikh, and M. Svanson, J. Electrochem. Soc. JESOAN 0013-4651 139, 206 (1992). 10.1149/1.2069171
75. R. T.-P. Lee, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2007, 685.
76. R. T.-P. Lee, IEEE Electron Device Lett. EDLEDZ 0741-3106 29, 89 (2008). 10.1109/LED.2007.910793
77. P. Kalra, N. Vora, P. Majhi, P. Y. Hung, H.-H. Tseng, R. Jammy, and T.-J. King Liu, Electrochem. Solid-State Lett. ESLEF6 1099-0062 12, H1 (2009). 10.1149/1.3002394
78. J. Seger, P.-E. Hellström, J. Lu, G. B. Malm, M. von Haartman, M. Östling, and S.-L. Zhang, Appl. Phys. Lett. APPLAB 0003-6951 86, 253507 (2005). 10.1063/1.1944888
79. T. Yamaguchi, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2007, 139.
80. Z. Zhang, Ph.D. thesis, KTH, Royal Inste of Technology, 2008.
81. Z. J. Qiu, Z. Zhang, J. Olsson, J. Lu, P.-E. Hellström, R. Liu, M. Östling, and S.-L. Zhang, Proceedings of ULIS 2008, Udine, Italy, 12-14 March 2008 (unpublished), pp. 175-178.
82. T. Ohguro, S. Nakamura, E. Morifuji, M. Ono, T. Yoshitomi, M. Saito, H. S. Momose, and H. Iwai, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 1995, 453.
83. L. W. Cheng, S. L. Cheng, J. Y. Chen, L. J. Chen, and B. Y. Tsui, Thin Solid Films THSFAP 0040-6090 355-356, 412 (1999). 10.1016/S0040-6090(99)00546-5
84. D. J. Oostra, J. Politiek, C. W. T. Bulle-Lieuwma, D. E. W. Vandenhoudt, and P. C. Zalm, J. Mater. Res. JMREEE 0884-2914 11, 1653 (1996). 10.1557/JMR.1996.0207
85. F. Mansour, R. Mahamdi, L. Jalabert, and P. Temple-Boyer, Thin Solid Films THSFAP 0040-6090 434, 152 (2003). 10.1016/S0040-6090(03)00468-1
86. K. Yamamoto, S. Sakashita, Y. Sato, M. Inoue, M. Anma, T. Oosuka, and J. Yugami, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 47, 2398 (2008). 10.1143/JJAP.47.2398
87. J. F. Ziegler, available at http://www.srim.org/
88. F. M. d'Heurle, C. S. Petersson, J. E. E. Baglin, S. J. La Placa, and C. Y. Wong, J. Appl. Phys. JAPIAU 0021-8979 55, 4208 (1984). 10.1063/1.333021
89. F. M. d'Heurle and P. Gas, J. Mater. Res. JMREEE 0884-2914 1, 205 (1986). 10.1557/JMR.1986.0205
90. J. B. Mitchell, P. P. Pronko, J. Shewchun, D. A. Thompson, and J. A. Davies, J. Appl. Phys. JAPIAU 0021-8979 46, 332 (1975). 10.1063/1.321339