High-performance 50-nm-gate-length Schottky-source/drain MOSFETs with dopant-segregation junctions

Digest of Technical Papers - Symposium on VLSI Technology

Volumn 2005, Issue , 2005, Pages 158-159

  Kinoshita, A ^a   Tanaka, C ^a   Uchida, K ^a   Koga, J ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CMOS INTEGRATED CIRCUITS; DOPING (ADDITIVES); GATES (TRANSISTOR); OSCILLATORS (ELECTRONIC); SEMICONDUCTOR JUNCTIONS;

CHANNEL-MOBILITY DEGRADATION; CMOS PERFORMANCE; DOPANT-SEGREGATION (DS); N-MOSFETS;

MOSFET DEVICES;

EID: 29244450764     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2005.1469250     Document Type: Conference Paper

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