Performance fluctuation of FinFETs with Schottky barrier source/drain

IEEE Electron Device Letters

Volumn 29, Issue 5, 2008, Pages 506-508

  Zhang, Zhen ^a   Lu, Jun ^b   Qiu, Zhijun ^a,c   Hellström, Per Erik ^a   Östling, Mikael ^a   Zhang, Shi Li ^a,c  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b UPPSALA UNIVERSITY   (Sweden)

^c FUDAN UNIVERSITY   (China)

Author keywords

FinFETs; Gate underlap; MOSFETs; Platinum silicide PtSi; Schottky barrier source drain (SB S D); Transmission electron microscopy (TEM)

Indexed keywords

INTERFACES (MATERIALS); PLATINUM COMPOUNDS; SCHOTTKY BARRIER DIODES; SILICIDES; TRANSMISSION ELECTRON MICROSCOPY;

GATE UNDERLAP;

FIELD EFFECT TRANSISTORS;

EID: 43549106338     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.920284     Document Type: Article

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