Investigation of metallized source/drain extension for high-performance strained NMOSFETs

IEEE Transactions on Electron Devices

Volumn 55, Issue 11, 2008, Pages 3221-3226

  Wang, Tzu Juei ^a   Ko, Chih Hsin ^b   Lin, Hong Nien ^b   Chang, Shoou Jinn ^a   Wu, San Lein ^c   Kuan, Ta Ming ^b   Lee, Wen Chen ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^c CHENG SHIU UNIVERSITY   (Taiwan)

Author keywords

Metallized source drain extension (M SDE); NMOSFETs; Source drain series resistance RSD; Uniaxial strain

Indexed keywords

COST EFFECTIVENESS; DIFFUSERS (OPTICAL); METALLIZING; MOSFET DEVICES; RELIABILITY;

AND GATES; BARRIER LOWERING; CHANNEL LENGTHS; CMOS TECHNOLOGIES; DRAIN EXTENSIONS; ELECTRICAL CHARACTERISTICS; GATE EDGES; INTRINSIC DEVICES; JUNCTION LEAKAGES; KEY TECHNOLOGIES; METALLIZED SOURCE/DRAIN EXTENSION (M-SDE); MOORE'S LAWS; NMOSFETS; SCALING TECHNIQUES; SOURCE/DRAIN EXTENSIONS; SOURCE/DRAIN SERIES RESISTANCE RSD; SOURCE/DRAIN SERIES RESISTANCES; STRAIN SENSITIVITIES; SUBTHRESHOLD SWINGS; UNIAXIAL STRAIN;

ELECTRIC BREAKDOWN;

EID: 56549100613     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2004245     Document Type: Article

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