A comparative study of two different schemes to dopant segregation at NiSi/Si and PtSi/Si interfaces for Schottky barrier height lowering

IEEE Transactions on Electron Devices

Volumn 55, Issue 1, 2008, Pages 396-403

  Qiu, Zhijun ^a,b   Zhang, Zhen ^a,b   Östling, Mikael ^b   Zhang, Shi Li ^b  

^a FUDAN UNIVERSITY   (China)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

Dopant segregation; Schottky barrier (SB) lowering; Schottky diode; Silicide

Indexed keywords

DIFFUSION; DOPING (ADDITIVES); INTERFACES (MATERIALS); SEMICONDUCTING SILICON COMPOUNDS; SILICIDES;

SCHOTTKY BARRIER HEIGHT; SILICIDATION-INDUCED DOPANT SEGREGATION; SILICIDE AS DIFFUSION SOURCE;

SCHOTTKY BARRIER DIODES;

EID: 37749045251     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.911080     Document Type: Article

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