Carbon co-implantation for ultra-shallow P+-N junction formation

Proceedings of the International Conference on Ion Implantation Technology

Volumn , Issue , 1996, Pages 665-667

  Craig, M ^a   Sultan, A ^a   Banerjee, S ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BORON; CARBON; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; ELECTRIC RESISTANCE MEASUREMENT; ION IMPLANTATION; OXIDES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR JUNCTIONS; TRANSMISSION ELECTRON MICROSCOPY;

CARBON COIMPLANTATION; RESIDUAL DEFECT ANALYSIS; TRANSIENT ENHANCED DIFFUSION (TED);

SILICON WAFERS;

EID: 0030349033     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)