Schottky-barrier height tuning by means of ion implantation into preformed silicide films followed by drive-in anneal

IEEE Electron Device Letters

Volumn 28, Issue 7, 2007, Pages 565-568

  Zhang, Zhen ^a   Qiu, Zhijun ^a,b   Liu, Ran ^b   Östling, Mikael ^a   Zhang, Shi Li ^a,b  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b FUDAN UNIVERSITY   (China)

Author keywords

Dopant segregation; Schottky barrier (SB) lowering; Schottky diode; Silicide

Indexed keywords

DOPANT SEGREGATION; DRIVE-IN ANNEAL;

ANNEALING; DOPING (ADDITIVES); ION IMPLANTATION; SILICIDES;

SCHOTTKY BARRIER DIODES;

EID: 34447282256     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.900295     Document Type: Article

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